SCT3017ALGC11
650V, 118A, THD, TRENCH-STRUCTURManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor SCT3017ALGC11 is a 650V N-Channel SiCFET MOSFET with a continuous drain current rating of 118A at 25°C and a maximum power dissipation of 427W. This through-hole component features a TO-247N package and exhibits a low on-resistance of 22.1mOhm at 47A and 18V. Key parameters include a gate charge of 172 nC at 18V and an input capacitance of 2884 pF at 500V. The device operates at junction temperatures up to 175°C. Applications for this SiCFET include high-efficiency power conversion in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 118A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 47A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 427W |
| Vgs(th) (Max) @ Id | 5.6V @ 23.5mA |
| Supplier Device Package | TO-247N |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2884 pF @ 500 V |