SCT2H12NZGC11
SICFET N-CH 1700V 3.7A TO3PFMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's SCT2H12NZGC11 is an N-Channel SiCFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) capability of 3.7 A at 25°C (Tc). The device features a maximum on-resistance (Rds On) of 1.5 Ohm at 1.1 A and 18 V gate-source voltage. With a maximum power dissipation of 35 W (Tc) and an operating junction temperature of 175°C, it is suitable for demanding power conversion and control systems. Key parameters include a gate charge (Qg) of 14 nC at 18 V and input capacitance (Ciss) of 184 pF at 800 V. The SCT2H12NZGC11 is housed in a TO-3PFM (SC-93-3) package for through-hole mounting. This SiCFET is utilized in industries such as renewable energy, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Supplier Device Package | TO-3PFM |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
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