SCT2H12NYTB
SICFET N-CH 1700V 4A TO268Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT2H12NYTB is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 4 A at 25°C (Tc). With a maximum power dissipation of 44 W (Tc) and a low on-resistance (Rds On) of 1.5 Ohm at 1.1 A and 18 V, it offers efficient power handling. The SCT2H12NYTB utilizes surface mount technology in a TO-268-3, D3PAK package. Key parameters include a gate charge (Qg) of 14 nC at 18 V and an input capacitance (Ciss) of 184 pF at 800 V. The device operates reliably at temperatures up to 175°C (TJ) and supports a gate-source voltage (Vgs) range of +22V to -6V. This SiC MOSFET is suitable for power conversion systems in industries such as industrial power supplies and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
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