SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT2750NYTB is an N-Channel SiCFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 5.9 A at 25°C (Tc). The SCT2750NYTB offers a maximum on-resistance (Rds On) of 975 mOhm at 1.7 A and 18 V gate drive. With a maximum junction temperature of 175°C and a power dissipation of 57 W at the case, this component is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 17 nC at 18 V and input capacitance (Ciss) of 275 pF at 800 V. The device is housed in a TO-268-3, D3PAK surface mount package and is supplied on tape and reel. Its SiCFET technology makes it applicable in industries such as industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 975mOhm @ 1.7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 630µA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 800 V |
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