SCT2450KEC
SICFET N-CH 1200V 10A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor SiCFET N-Channel SCT2450KEC. This component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 10A at 25°C. The device offers a maximum on-resistance (Rds On) of 585 mOhm at 3A and 18V, with a gate drive voltage up to 18V. Key parameters include a gate charge (Qg) of 27 nC at 18V and input capacitance (Ciss) of 463 pF at 800V. Rated for 85W power dissipation at 175°C junction temperature, it is housed in a TO-247 package with through-hole mounting. This SiCFET is suitable for applications in power conversion and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 585mOhm @ 3A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 463 pF @ 800 V |
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