SCT2280KEC
SICFET N-CH 1200V 14A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SCT2280KEC is an N-Channel SiCFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 14A (Tc) at 25°C. The device offers a maximum on-resistance (Rds On) of 364mOhm at 4A, 18V, with a gate drive voltage range of up to 18V. Key parameters include input capacitance (Ciss) of 667 pF (Max) @ 800 V and gate charge (Qg) of 36 nC (Max) @ 18 V. The SCT2280KEC is housed in a TO-247-3 package suitable for through-hole mounting and operates at an ambient temperature up to 175°C (TJ). Power dissipation is rated at 108W (Tc). This SiCFET is utilized in power conversion systems, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 108W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
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