SCT2160KEC
SICFET N-CH 1200V 22A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's SiCFET N-Channel MOSFET, part number SCT2160KEC, offers a 1200V drain-to-source voltage and a continuous drain current of 22A at 25°C (Tc). This device features a maximum on-resistance of 208mOhm at 7A and 18V, with a gate threshold voltage of 4V at 2.5mA. The input capacitance (Ciss) is rated at a maximum of 1200pF at 800V, and the gate charge (Qg) is 62nC at 18V. Designed for through-hole mounting in a TO-247-3 package, the SCT2160KEC can dissipate up to 165W (Tc) and operates at junction temperatures up to 175°C. This component is suitable for high-power applications in sectors such as electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 7A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 800 V |
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