SCT2120AFC
SICFET N-CH 650V 29A TO220ABManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor SiCFET N-Channel MOSFET, part number SCT2120AFC. This device features a 650 V drain-to-source voltage and a continuous drain current of 29 A (Tc). With a maximum on-resistance of 156 mOhm at 10 A and 18 Vgs, it offers efficient switching characteristics. The SCT2120AFC is packaged in a TO-220AB through-hole configuration. Key parameters include a gate charge of 61 nC @ 18 V and input capacitance of 1200 pF @ 500 V. This component is suitable for applications in high-voltage power conversion, electric vehicles, and industrial power supplies, operating at junction temperatures up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 3.3mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
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