SCT2080KEC
SICFET N-CH 1200V 40A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCT2080KEC is an N-Channel SiCFET designed for high-performance power applications. This component features a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) capability of 40A at 25°C (Tc). With a maximum power dissipation of 262W (Tc), it is suitable for demanding environments. The device exhibits a low Rds On of 117mOhm at 10A and 18V (Vgs), contributing to reduced conduction losses. Key parameters include a Gate Charge (Qg) of 106 nC at 18V (Vgs) and an Input Capacitance (Ciss) of 2080 pF at 800V (Vds). The operating junction temperature is rated up to 175°C (TJ). This SiCFET is housed in a standard TO-247-3 package with a through-hole mounting type. Applications for this component span industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 800 V |
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