SCH2080KEC
SICFET N-CH 1200V 40A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor SCH2080KEC is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 40 A at 25°C. The device offers a low on-resistance (Rds On) of 117 mOhm maximum at 10 A and 18 V gate-source voltage. With a maximum power dissipation of 262 W at the case temperature, it is suitable for demanding power conversion systems. The SCH2080KEC utilizes a TO-247 package for through-hole mounting, enabling efficient thermal management with an operating junction temperature of up to 175°C. Key parameters include a gate charge (Qg) of 106 nC maximum at 18 V and input capacitance (Ciss) of 1850 pF maximum at 800 V. This SiCFET is widely implemented in industrial power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 262W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 800 V |
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