RZY200P01TL
MOSFET P-CH 12V 20A TCPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RZY200P01TL is a P-Channel MOSFET designed for demanding applications. This device features a 12V drain-source voltage (Vdss) and supports a continuous drain current of 20A at 25°C ambient temperature. Its power dissipation capability is rated at 20W (Tc) for thermal management. Presented in a compact TCPT3 surface-mount package, it is supplied on tape and reel for automated assembly. The MOSFET technology ensures efficient switching performance. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TCPT3 |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
