RZR025P01TL
MOSFET P-CH 12V 2.5A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RZR025P01TL is a P-channel MOSFET designed for demanding applications requiring efficient power switching. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 2.5A at 25°C. With a low on-resistance (Rds On) of 61mOhm at 4.5V Vgs and 2.5A Id, it minimizes conduction losses. The TSMT3 package, a surface-mount configuration, offers a compact footprint suitable for portable electronics, automotive systems, and power management solutions. Key electrical characteristics include a gate charge (Qg) of 13nC at 4.5V and an input capacitance (Ciss) of 1350pF at 6V Vds. Operating temperature ranges up to 150°C (TJ) and a maximum power dissipation of 1W (Ta) underscore its robust design.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 6 V |