RZR020P01TL
MOSFET P-CH 12V 2A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET RZR020P01TL is a surface mount device designed for efficient power switching applications. This MOSFET features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) capability of 2A at 25°C. The Rds On is rated at a maximum of 105mOhm at 2A and 4.5V Vgs. With a typical gate charge of 6.5 nC at 4.5V, it offers good switching performance. The device operates within a temperature range of 150°C (TJ) and is supplied in a TSMT3 (SC-96) package. This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 6 V |