Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

RZQ050P01TR

Banner
productimage

RZQ050P01TR

MOSFET P-CH 12V 5A TSMT6

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor P-Channel MOSFET, part number RZQ050P01TR, is a surface mount device designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 5A (Ta) at 25°C. The RZQ050P01TR exhibits a maximum On-Resistance (Rds On) of 26mOhm at 5A and 4.5V Vgs. It is supplied in a TSMT6 (SC-95) package, also known as SOT-23-6 Thin, suitable for tape and reel packaging. Key parameters include a Gate Charge (Qg) of 35 nC at 4.5V and Input Capacitance (Ciss) of 2850 pF at 6V. Operating at temperatures up to 150°C (TJ), this MOSFET is a viable option for automotive and industrial electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs26mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageTSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 6 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RQ7G080BGTCR

NCH 40V 8A, TSMT8, POWER MOSFET

product image
QS6U22TR

MOSFET P-CH 20V 1.5A TSMT6

product image
R6020YNXC7G

600V 12A TO-220FM, FAST SWITCHIN