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RZQ045P01TR

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RZQ045P01TR

MOSFET P-CH 12V 4.5A TSMT6

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor P-Channel MOSFET, part number RZQ045P01TR, is a 12V device designed for efficient power switching. This TSMT6 (SC-95) packaged MOSFET offers a continuous drain current of 4.5A at 25°C with a maximum power dissipation of 1.25W (Ta). Key performance characteristics include a low on-resistance of 35mOhm at 4.5A and 4.5V, and a gate charge of 31 nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 2450 pF at 6V. The device supports a wide gate-source voltage range from 1.5V to 4.5V for drive, with a maximum Vgs of ±10V and a threshold voltage of 1V at 1mA. Operating temperature range extends to 150°C (TJ). This surface mount component is commonly utilized in consumer electronics and industrial automation applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 4.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageTSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2450 pF @ 6 V

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