RZL025P01TR
MOSFET P-CH 12V 2.5A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RZL025P01TR is a P-Channel MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) capability of 2.5A at 25°C. With a maximum power dissipation of 1W (Ta), it is suitable for thermal management considerations. The RZL025P01TR offers a low on-resistance (Rds On) of 61mOhm at 2.5A and 4.5V Vgs. It is packaged in a TUMT6, a 6-SMD, Flat Leads surface mount configuration, supplied on tape and reel. This component is utilized in various industries including automotive and consumer electronics where efficient power switching is critical. The gate charge (Qg) is 13 nC at 4.5V, and input capacitance (Ciss) is 1350 pF at 6V. Operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TUMT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 6 V |
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