RXR035N03TCL
MOSFET N-CH 30V 3.5A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RXR035N03TCL, is a 30V device designed for efficient power switching. This MOSFET features a low on-resistance of 50mOhm maximum at 3.5A and 10V Vgs, facilitating minimal power loss in operation. With a continuous drain current capability of 3.5A and a maximum power dissipation of 1W, it is suitable for power management applications. The device is housed in a compact TSMT3 (SC-96) package, enabling surface mount integration. Key parameters include a gate charge of 3.3 nC at 5V and input capacitance of 180 pF at 10V. Operating temperature reaches up to 150°C (TJ). This component is commonly found in consumer electronics, industrial controls, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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