RX3L07BGNC16
NCH 60V 70A, TO-220AB, POWER MOSManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel Power MOSFET, part number RX3L07BGNC16. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C, with a maximum power dissipation of 96W (Tc). The on-resistance (Rds On) is specified at a maximum of 7.2mOhm at 70A and 10V gate-source voltage (Vgs). Designed with a 4.5V to 10V drive voltage range, it has a gate charge (Qg) of 55 nC (max) at 10V and input capacitance (Ciss) of 2600 pF (max) at 30V. The RX3L07BGNC16 is housed in a TO-220AB package for through-hole mounting and operates at junction temperatures up to 150°C. This device is suitable for applications in power supply, motor control, and automotive systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 50µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 30 V |
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