RX3G18BGNC16
NCH 40V 180A, TO-220AB, POWER MOManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RX3G18BGNC16. This TO-220AB packaged device features a drain-to-source voltage of 40 V and a continuous drain current of 180 A at 25°C. The device exhibits a maximum on-resistance of 1.64 mOhm at 90 A and 10 V, with a gate threshold voltage of 2.5 V at 1 mA. Key parameters include a gate charge of 168 nC at 10 V and input capacitance of 12000 pF at 20 V. Maximum power dissipation is 125 W at the case temperature. This component is suitable for high-power switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.64mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 20 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
