RW1E025RPT2CR
MOSFET P-CH 30V 2.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RW1E025RPT2CR is a P-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C. The Rds On is specified at a maximum of 75mOhm when biased at 2.5A and 10V gate-source voltage. With a 4V to 10V drive voltage range, it offers flexibility in design. The total gate charge (Qg) is 5.2 nC maximum at 5V, and input capacitance (Ciss) is 480 pF maximum at 10V. Operating at a junction temperature up to 150°C, this MOSFET has a maximum power dissipation of 700mW. It is packaged in a 6-WEMT surface mount configuration, supplied on tape and reel. This component is suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
