RW1E015RPT2R
MOSFET P-CH 30V 1.5A WEMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RW1E015RPT2R is a P-Channel MOSFET designed for surface mount applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.5A at 25°C (Ta). The MOSFET offers a maximum on-resistance (Rds On) of 160mOhm at 1.5A and 10V. Key parameters include a gate charge (Qg) of 3.2 nC (Max) at 5V and input capacitance (Ciss) of 230 pF (Max) at 10V. It is rated for a maximum power dissipation of 400mW (Ta) and operates at junction temperatures up to 150°C. The component is supplied in a 6-WEMT package and is available on tape and reel. This MOSFET technology is suitable for applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
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