RW1E014SNT2R
MOSFET N-CH 30V 1.4A WEMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RW1E014SNT2R. This device features a 30V drain-to-source voltage and supports continuous drain current of 1.4A at 25°C. The on-resistance (Rds On) is a maximum of 240mOhm at 1.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 1.4 nC at 5V and input capacitance (Ciss) of 70 pF at 10V Vds. The MOSFET is housed in a 6-SMD, Flat Leads (6-WEMT) package for surface mounting and operates at temperatures up to 150°C (TJ). Power dissipation is rated at 400mW (Ta). This component is commonly utilized in industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 10 V |