RW1C025ZPT2CR
MOSFET P-CH 20V 2.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor P-Channel MOSFET, part number RW1C025ZPT2CR, is a surface-mount device designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 2.5A at 25°C. The MOSFET offers a low on-resistance of 65mOhm at 2.5A and 4.5V Vgs, with a drive voltage range from 1.5V to 4.5V. Key parameters include a Gate Charge (Qg) of 21 nC at 4.5V and an Input Capacitance (Ciss) of 1300 pF at 10V. With a maximum power dissipation of 700mW (Ta) and an operating junction temperature of 150°C, this device is packaged in a 6-WEMT configuration and supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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