RW1C020UNT2R
MOSFET N-CH 20V 2A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RW1C020UNT2R is an N-channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C. The device exhibits a low on-resistance (Rds On) of 105mOhm at 2A and 4.5V Vgs. With a gate charge (Qg) of 2 nC at 4.5V and input capacitance (Ciss) of 180 pF at 10V, it offers efficient switching characteristics. The MOSFET is housed in a compact 6-WEMT surface mount package, suitable for high-density designs. Its maximum power dissipation is 400mW (Ta) and it operates within a temperature range of 150°C (TJ). Ideal for power management and switching circuits in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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