RW1C015UNT2R
MOSFET N-CH 20V 1.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RW1C015UNT2R is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 180mOhm at 1.5A and 4.5V gate-source voltage. With a maximum gate charge (Qg) of 1.8 nC at 4.5V, it offers fast switching characteristics. The input capacitance (Ciss) is 110 pF (max) at 10V drain-source voltage. Operating at temperatures up to 150°C (TJ), this MOSFET is packaged in a compact 6-WEMT surface-mount configuration, suitable for automated assembly. Power dissipation is rated at 400mW (Ta). The RW1C015UNT2R finds utility in consumer electronics, industrial automation, and communication systems requiring compact and reliable power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 10 V |
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