RW1A030APT2CR
MOSFET P-CH 12V 3A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, part number RW1A030APT2CR, offers a 12V drain-source voltage and 3A continuous drain current at 25°C. This device features a low on-resistance of 42mOhm at 3A and 4.5V Vgs, with a gate charge of 22nC at 4.5V. The input capacitance (Ciss) is a maximum of 2700pF at 6V. Operating at a maximum junction temperature of 150°C, it is housed in a 6-SMD, Flat Leads (6-WEMT) package suitable for surface mounting. Power dissipation is rated at 700mW (Ta). This component is commonly utilized in industrial and consumer electronics applications requiring efficient switching and power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 6 V |
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