RW1A013ZPT2R
MOSFET P-CH 12V 1.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RW1A013ZPT2R is a P-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 1.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 260mOhm at 1.3A, 4.5V. With a gate-source voltage (Vgs) range of ±10V and a threshold voltage (Vgs(th)) of 1V at 1mA, it offers flexible drive options. Key parameters include input capacitance (Ciss) of 290pF at 6V and gate charge (Qg) of 2.4nC at 4.5V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 400mW (Ta). It is supplied in a 6-WEMT surface-mount package, delivered on tape and reel. This component is suitable for use in power management and general switching applications across various electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
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