RV8L002SNHZGG2CR
MOSFET N-CH 60V 250MA DFN1010-3WManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RV8L002SNHZGG2CR, offers a 60V drain-source voltage and a continuous drain current of 250mA at 25°C. This AEC-Q101 qualified component features a low on-resistance of 2.4 Ohms maximum at 250mA and 10V Vgs. The DFN1010-3W package provides a 1W power dissipation capability. With an input capacitance of 15pF at 25V, this surface mount device is suitable for automotive applications. It operates at temperatures up to 150°C (TJ) and has a gate-source threshold voltage of 2.3V. This device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | DFN1010-3W |
| Grade | Automotive |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 25 V |
| Qualification | AEC-Q101 |
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