RV8C010UNHZGG2CR
MOSFET N-CH 20V 1A DFN1010-3WManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RV8C010UNHZGG2CR is an N-Channel MOSFET designed for demanding applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C. The low on-resistance, specified at a maximum of 470mOhm at 500mA and 4.5V Vgs, contributes to efficient power handling. With a maximum power dissipation of 1W and an operating temperature up to 150°C, this MOSFET is suitable for operation in challenging environments. The DFN1010-3W package facilitates a compact footprint, ideal for surface mount integration. Qualified to AEC-Q101 standards, this component is engineered for automotive applications. Input capacitance (Ciss) is a maximum of 40pF at 10V Vds. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 470mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | DFN1010-3W |
| Grade | Automotive |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
| Qualification | AEC-Q101 |
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