RUU002N05T106
MOSFET N-CH 50V 200MA UMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RUU002N05T106 is an N-Channel MOSFET designed for surface mounting. This component features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous Drain current (Id) of 200mA at 25°C. The Rds On is specified at a maximum of 2.2 Ohms when driven with 4.5V Vgs and 200mA Id. The device offers a low threshold voltage (Vgs(th)) of 1V maximum at 1mA. Input capacitance (Ciss) is a maximum of 25 pF at 10V Vds. This MOSFET is rated for a maximum power dissipation of 200mW (Ta) and an operating junction temperature of 150°C. The UMT3 package, equivalent to SC-70/SOT-323, is supplied on tape and reel. Applications include power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
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