RUQ050N02TR
MOSFET N-CH 20V 5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RUQ050N02TR is an N-channel power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5A at 25°C. The Rds(on) is specified at a maximum of 30mOhm at 5A and 4.5V Vgs, with a typical gate threshold voltage (Vgs(th)) of 1.3V at 1mA. Key parameters include a gate charge (Qg) of 12nC at 4.5V and an input capacitance (Ciss) of 900pF at 10V Vds. The RUQ050N02TR operates with a recommended gate drive from 1.5V to 4.5V, with a maximum Vgs of ±10V. It offers a maximum power dissipation of 1.25W (Ta) and an operating junction temperature of 150°C. The component is housed in a TSMT6 (SC-95) package, which is a SOT-23-6 Thin variant, suitable for surface mounting. This MOSFET is delivered in Tape & Reel packaging. Its performance characteristics make it suitable for use in various industrial and consumer electronics applications requiring compact and efficient power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
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