RUE002N05TL
MOSFET N-CH 50V 200MA EMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RUE002N05TL is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 50V and a continuous drain current capability of 200mA at 25°C. The Rds(on) is specified at a maximum of 2.2 Ohms when driven at 200mA and 4.5V Vgs. With a maximum power dissipation of 150mW (Ta), it is suitable for compact designs. The input capacitance (Ciss) is a maximum of 25 pF at 10V Vds. This device is housed in an EMT3 (SC-75, SOT-416) surface mount package. Typical applications include power management circuits, battery-powered devices, and portable electronics. It operates within a temperature range of -55°C to 150°C (TJ) and has a gate-source voltage (Vgs) limit of ±8V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | EMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
