RTU002P02T106
MOSFET P-CH 20V 250MA UMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTU002P02T106 is a P-Channel MOSFET designed for surface mounting in the UMT3 package (SC-70, SOT-323). This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 250mA at 25°C ambient. The Rds(On) is specified at a maximum of 1.5 Ohms with an Id of 250mA and Vgs of 4.5V. It operates with gate-source voltages up to ±12V and has a threshold voltage (Vgs(th)) of 2V maximum at 1mA. The MOSFET offers a maximum power dissipation of 200mW at 25°C ambient and an operating junction temperature of 150°C. Input capacitance (Ciss) is a maximum of 50pF at 10V Vds. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 250mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | UMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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