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RTR040N03TL

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RTR040N03TL

MOSFET N-CH 30V 4A TSMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's RTR040N03TL is an N-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at 25°C. Its low on-resistance, specified at a maximum of 48mOhm at 4A and 4.5V Vgs, ensures efficient power transfer. The RTR040N03TL operates with gate drive voltages as low as 2.5V and up to 4.5V, with a maximum gate-source voltage (Vgs) of ±12V. Key parameters include a gate charge (Qg) of 8.3nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 475pF maximum at 10V Vds. This component is housed in a TSMT3 (SC-96) surface-mount package and supports a maximum junction temperature of 150°C. It is suitable for use in power management, consumer electronics, and industrial control systems. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-96
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs48mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTSMT3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds475 pF @ 10 V

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