RTR030P02TL
MOSFET P-CH 20V 3A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTR030P02TL is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 3A at 25°C. The low on-resistance, specified at a maximum of 75mOhm at 3A and 4.5V Vgs, makes it suitable for power switching and control. With a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C, the RTR030P02TL offers robust performance. Key parameters include a gate charge of 9.3 nC at 4.5V and an input capacitance (Ciss) of 840 pF at 10V. The TSMT3 package, a surface mount SC-96, is supplied on tape and reel. This component finds application in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V |
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