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RTR025N05TL

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RTR025N05TL

MOSFET N-CH 45V 2.5A TSMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's RTR025N05TL is an N-Channel MOSFET designed for efficient power switching. This component features a Drain-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) of 2.5A at 25°C. The Rds(On) is specified at a maximum of 130mOhm when conducting 2.5A with a 4.5V gate-source voltage. The device operates with drive voltages ranging from 2.5V to 4.5V and has a maximum Gate Charge (Qg) of 3.2nC at 4.5V. Input Capacitance (Ciss) is a maximum of 250pF at 10V. The RTR025N05TL is packaged in a TSMT3 (SC-96) surface mount configuration, supplied on tape and reel, and can operate at junction temperatures up to 150°C. Maximum power dissipation is 1W. This MOSFET is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-96
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs130mOhm @ 2.5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTSMT3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)45 V
Gate Charge (Qg) (Max) @ Vgs3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V

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