RTR020N05TL
MOSFET N-CH 45V 2A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RTR020N05TL is a high-performance N-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 45V and a continuous drain current (Id) of 2A at 25°C, with a maximum power dissipation of 1W (Ta). The Rds(on) is specified at 180mOhm maximum at 2A and 4.5V gate-source voltage. Key characteristics include a gate charge (Qg) of 4.1 nC maximum at 4.5V and an input capacitance (Ciss) of 200 pF maximum at 10V. The RTR020N05TL operates over a temperature range of 150°C (TJ) and is housed in a compact TSMT3 (SC-96) surface mount package, supplied on tape and reel. This MOSFET is suitable for various industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
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