RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTQ045N03TR is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 4.5A at 25°C. The device offers a low on-resistance (Rds On) of 43mOhm maximum at 4.5A and 4.5V Vgs. It operates with gate drive voltages ranging from 2.5V to 4.5V, with a maximum gate-source voltage (Vgs) of ±12V and a threshold voltage (Vgs(th)) of 1.5V at 1mA. The RTQ045N03TR has a maximum power dissipation of 1.25W (Ta) and an operating junction temperature of 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 10.7 nC maximum at 4.5V Vgs and input capacitance (Ciss) of 540 pF maximum at 10V Vds. This MOSFET is supplied in a TSMT6 (SC-95) package, also known as SOT-23-6 Thin, suitable for surface mount configurations. It is commonly utilized in power management and general-purpose switching within consumer electronics and industrial automation. The RTQ045N03TR is presented in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 10 V |
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