RTQ040P02TR
MOSFET P-CH 20V 4A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTQ040P02TR is a P-Channel MOSFET designed for efficient power management. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4A at 25°C. With a low on-resistance of 50mOhm maximum at 4A and 4.5V Vgs, it minimizes conduction losses. The MOSFET is housed in a TSMT6 (SC-95) package, a compact surface mount solution ideal for space-constrained applications. Key parameters include a Gate Charge (Qg) of 12.2 nC maximum at 4.5V and Input Capacitance (Ciss) of 1350 pF maximum at 10V. It operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for various applications including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |
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