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RTQ035P02TR

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RTQ035P02TR

MOSFET P-CH 20V 3.5A TSMT6

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RTQ035P02TR is a P-Channel MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.5A at 25°C, with a maximum power dissipation of 1.25W. The ON-resistance (Rds On) is specified at a maximum of 65mOhm at 3.5A and 4.5V Vgs. Gate Charge (Qg) is 10.5 nC at 4.5V, and input capacitance (Ciss) is 1200 pF at 10V. This MOSFET operates across a temperature range of -55°C to 150°C. It is supplied in a TSMT6 (SC-95) package, suitable for surface mounting, and is available on tape and reel. The RTQ035P02TR is utilized in various industrial sectors, including consumer electronics and power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 3.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 10 V

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