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RTQ035N03TR

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RTQ035N03TR

MOSFET N-CH 30V 3.5A TSMT6

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RTQ035N03TR is an N-Channel MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C. With a maximum on-resistance (Rds On) of 54mOhm at 3.5A and 4.5V gate-source voltage, it offers low conduction losses. The MOSFET is available in a TSMT6 (SC-95) surface mount package, facilitating automated assembly. Key parameters include a gate charge (Qg) of 6.4 nC at 4.5V and input capacitance (Ciss) of 285 pF at 10V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±12V. This component is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs54mOhm @ 3.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageTSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds285 pF @ 10 V

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