RTQ025P02TR
MOSFET P-CH 20V 2.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTQ025P02TR is a P-Channel MOSFET designed for surface-mount applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.5A at 25°C, with a maximum power dissipation of 1.25W (Ta). The On-Resistance (Rds On) is specified at 100mOhm maximum at 2.5A and 4.5V gate-source voltage. Gate drive voltage requirements are 2.5V and 4.5V for minimum and maximum Rds On, respectively. Key electrical parameters include a maximum gate charge (Qg) of 6.4 nC at 4.5V and a maximum input capacitance (Ciss) of 580 pF at 10V. The device operates within an ambient temperature range up to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±12V. The threshold voltage (Vgs(th)) is 2V maximum at 1mA. Supplied in a TSMT6 (SC-95) package (SOT-23-6 Thin, TSOT-23-6), this MOSFET is commonly utilized in automotive and industrial power management circuits. The RTQ025P02TR is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 10 V |
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