RTL030P02TR
MOSFET P-CH 20V 3A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RTL030P02TR is a P-Channel MOSFET designed for efficient power switching applications. This surface mount device, housed in a TUMT6 package, offers a continuous drain current of 3A at 25°C with a drain-source voltage of 20V. Key performance parameters include a maximum Rds(on) of 70mOhm at 3A and 4.5V Vgs, a gate charge of 8 nC at 4.5V Vgs, and an input capacitance of 760 pF at 10V Vds. It operates with a maximum Vgs of ±12V and a threshold voltage of 2V at 1mA. The RTL030P02TR is rated for a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C. This component finds application in various industries, including automotive and consumer electronics. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 10 V |
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