RTL020P02TR
MOSFET P-CH 20V 2A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
**Rohm Semiconductor** P-Channel **MOSFET**, part number **RTL020P02TR**, is a surface mount device designed for efficient power switching applications. This component features a Drain-Source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2A at 25°C. The low on-resistance of 135mOhm at 2A and 4.5V (Vgs) is achieved with a gate-source voltage (Vgs) range of 2.5V to 4.5V for optimal Rds(on) performance. Key parameters include a maximum gate charge (Qg) of 4.9 nC at 4.5V and input capacitance (Ciss) of 430 pF at 10V. The device operates within an ambient temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Packaged in a TUMT6 (6-SMD, Flat Leads) and supplied on tape and reel, this MOSFET is suitable for use in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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