RTF020P02TL
MOSFET P-CH 20V 2A TUMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTF020P02TL is a P-Channel MOSFET with a drain-source voltage of 20V and a continuous drain current of 2A. This device features a maximum power dissipation of 800mW (Ta) and an on-resistance of 85mOhm @ 2A, 4.5V. The gate threshold voltage is 2V @ 1mA, with a maximum gate-source voltage of ±12V. Input capacitance (Ciss) is 640pF @ 10V, and gate charge (Qg) is 7nC @ 4.5V. Designed for surface mount applications, it is supplied in a TUMT3 package, delivered on tape and reel. This component is utilized in various automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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