RTF015P02TL
MOSFET P-CH 20V 1.5A TUMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RTF015P02TL is a P-Channel MOSFET designed for surface mount applications within the TUMT3 package. This device features a 20V drain-source voltage (Vdss) and can handle a continuous drain current of 1.5A at 25°C, with a maximum power dissipation of 800mW (Ta). The on-resistance (Rds On) is specified at 135mOhm maximum at 1.5A and 4.5V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 5.2 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 560 pF maximum at 10V Vds. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in consumer electronics, industrial automation, and power management circuits. The RTF015P02TL is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 10 V |
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