RTF010P02TL
MOSFET P-CH 20V 1A TUMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RTF010P02TL is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 1A at 25°C. With a maximum On-Resistance (Rds On) of 390mOhm at 1A and 4.5V, it offers efficient power switching. The MOSFET operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 800mW (Ta).
Key electrical parameters include a Gate Charge (Qg) of 2.1 nC at 4.5V and an Input Capacitance (Ciss) of 150pF at 10V. Drive voltages of 2.5V and 4.5V are supported. The RTF010P02TL is housed in a compact TUMT3 package, suitable for surface mount assembly. This component is utilized in industries such as consumer electronics, industrial automation, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TUMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
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