RT1E050RPTR
MOSFET P-CH 30V 5A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor P-Channel MOSFET, part number RT1E050RPTR, features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 5A at 25°C. This surface mount device, housed in an 8-TSST package, offers a maximum power dissipation of 1.25W (Ta) and an Rds On rating of 36mOhm at 5A, 10V. Designed for efficient switching, it operates with drive voltages between 4V and 10V and has a typical Gate Charge (Qg) of 13 nC at 5V. The Input Capacitance (Ciss) is a maximum of 1300 pF at 10V, and the component can withstand a Gate-Source Voltage (Vgs) of up to ±20V. This MOSFET is suitable for applications in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
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