RT1E040RPTR
MOSFET P-CH 30V 4A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RT1E040RPTR is a P-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. The device exhibits a low on-resistance (Rds On) of 45mOhm at 4A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 550mW at 25°C and an operating junction temperature of 150°C, it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1000pF at 10V. The RT1E040RPTR is supplied in an 8-TSST surface-mount package and is offered in Tape & Reel (TR) packaging. This MOSFET is commonly utilized in automotive, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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