RT1C060UNTR
MOSFET N-CH 20V 6A 8TSSTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RT1C060UNTR is a N-Channel MOSFET designed for surface mounting. This component features a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current of 6A (Ta) at 25°C. The Rds On is specified at a maximum of 28mOhm at 6A, 4.5V, with drive voltages ranging from 1.5V to 4.5V. Key electrical characteristics include a maximum gate charge (Qg) of 11 nC at 4.5V and an input capacitance (Ciss) of 870 pF (max) at 10V. The device operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 650mW (Ta). The packaging is 8-TSST, supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 8-TSST |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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